| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cold wall type CVD apparatus that can enhance a raw material yield. <P>SOLUTION: In the CVD apparatus in which a raw material gas is made to perform chemical reaction, thereby a superconducting layer is film-formed on a surface of a tape-shaped base material, a raw material gas transport passage for guiding the raw material gas jetted from the raw material gas jetting unit to the surface of the tape-shaped base material is disposed in a reaction chamber that includes: a raw material gas jetting unit for jetting raw material gas by a jetting speed of at least 10 m/s; a susceptor for supporting the tape-shaped base material and heating the tape-shaped base material through heat transfer; a heater for heating the susceptor; and an inert gas introducing unit for introducing inert gas to suppress the contact between the heater and the raw material gas. <P>COPYRIGHT: (C)2012,JPO&INPIT |
