Semiconductor device has planar conductor that is formed on insulation layer in opposite side of substrate, where lateral edge of conductor is contacted and covered with metal film

摘要

The device has a semiconductor substrate (1) that is provided with an insulation layer (13), and an electrically conductive connection pad (14) arranged in the insulation layer. A penetration recess (23) is formed on the connection pad. A metal film (17) is formed within the recess and contacted with the connection pad. A planar conductor (4) or intermetal layer (3) is formed on the insulation layer in the opposite side of substrate. The lateral edge (22) of the conductor is contacted and covered with the metal film. An independent claim is included for method for manufacturing semiconductor device.