| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of a high-speed operation, which has less occurrence of variation in electric characteristics due to a short channel effect. <P>SOLUTION: An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor, and a channel formation region, a source region and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by serving a gate electrode as a mask in a self-aligned process in which one type or a plurality of types of elements among Group 15 elements are added in the semiconductor layer. The source region and the drain region can be provided with a wurtzite type crystalline structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
