发明名称 RESIN FOR ETCHING MASK, COATING MATERIAL FOR ETCHING MASK AND METHOD FOR FORMING PATTERN ON SAPPHIRE SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a resin for etching mask, providing a coated film having excellent etching resistance and adhesiveness to a sapphire substrate; to provide a coating material for the etching mask, containing the resin for the etching mask; and to provide a method for forming a pattern on the sapphire substrate by using the coating material for the etching mask. <P>SOLUTION: The resin for the etching mask is a resin for the etching mask usable for the formation of the etching mask arranged on the surface of the sapphire substrate, is the resin (a ring-opened (co)polymer of a cyclic olefin) having a polar group (a polar group having an oxygen atom) and &le;3 of a value calculated by the formula (1): N<SB POS="POST">T</SB>/(N<SB POS="POST">C</SB>-N<SB POS="POST">O</SB>) (1) (wherein, N<SB POS="POST">T</SB>is the number of the whole atoms constituting the resin; N<SB POS="POST">C</SB>is the total number of the carbon atoms constituting the resin; and N<SB POS="POST">O</SB>is the total number of the oxygen atoms constituting the resin). <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012149151(A) 申请公布日期 2012.08.09
申请号 JP20110008255 申请日期 2011.01.18
申请人 JSR CORP 发明人 MOGI TAKESHI;KATSUTA KOHEI;NISHIMURA YUKIO
分类号 C08G61/06;H01L21/027 主分类号 C08G61/06
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