发明名称 |
Phase Shifting Device and a Method for Manufacturing the Same |
摘要 |
In an embodiment, a phase shifting device may be provided. The phase shifting device may include a supporting layer and a semiconducting layer disposed above the supporting layer. The semiconducting layer may include a first doped region doped with doping atoms of a first conductivity type and arranged on the supporting layer; and a second doped region doped with doping atoms of a second conductivity type being different from the first conductivity type; wherein the second doped region may be disposed over the first doped region such that a first doped regions junction may be formed in a direction substantially parallel to a surface of the supporting layer and a second doped regions junction may be formed in a direction substantially perpendicular to the surface of the supporting layer. A method of forming a phase shifting device and an electro-optic device may also be provided.
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申请公布号 |
US2012201488(A1) |
申请公布日期 |
2012.08.09 |
申请号 |
US200913379734 |
申请日期 |
2009.06.22 |
申请人 |
LIOW TSUNG-YANG JASON;LO GUO QIANG PATRICK;YU MINGBIN;FANG QING;AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
LIOW TSUNG-YANG JASON;LO GUO QIANG PATRICK;YU MINGBIN;FANG QING |
分类号 |
G02F1/035;G02B6/12;H01L21/02 |
主分类号 |
G02F1/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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