发明名称 Piezoelectric element and film formation method for crystalline ceramic
摘要 <p>In a piezoelectric element (1) having a substrate (2), a lower electrode (4) layered on the substrate (2), a piezoelectric body (6) made of ceramic layered on top of the lower electrode (4) and an upper electrode (7) layered on the piezoelectric body (6), wherein a first metal layer (3) is provided between the substrate (2) and the lower electrode (4), a second metal layer (5) is provided between the lower electrode (4) and the piezoelectric body (6), and the first metal layer (3) and the second metal layer (5) are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu. </p>
申请公布号 EP1981098(A3) 申请公布日期 2012.08.08
申请号 EP20080006982 申请日期 2008.04.08
申请人 FUNAI ELECTRIC CO., LTD. 发明人 MURAYAMA, MANABU;MAEDA, SHIGEO
分类号 H01L41/09;C23C14/08;H01L41/047;H01L41/18;H01L41/187;H01L41/314;H01L41/316;H01L41/319;H01L41/39 主分类号 H01L41/09
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