发明名称 SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF ERASING DATA
摘要 PURPOSE: A semiconductor memory device and a data erasing method thereof are provided to shorten data erase time by quickly supplying a ground voltage to a memory cell in a soft programming operation. CONSTITUTION: A plurality of memory cells are serially connected between a bit line and a source line. A bit line control voltage supply unit(100) supplies a control voltage with a ground voltage level to the bit line in a soft programming operation when a control voltage with a different level is supplied to the bit line according to an operation mode. A page buffer unit(300) senses and amplifies read data received by the bit line and transmits write data to the bit line. A data transmitting unit(200) selectively transmits data between the bit line and the page buffer unit.
申请公布号 KR20120088451(A) 申请公布日期 2012.08.08
申请号 KR20110009809 申请日期 2011.01.31
申请人 SK HYNIX INC. 发明人 PARK, YOUNG SOO
分类号 G11C16/10;G11C16/12;G11C16/14;G11C16/30 主分类号 G11C16/10
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