发明名称 SUBSTRATE PROCESSING METHOD
摘要 PURPOSE: A substrate treating method is provided to quickly form and stably maintain a high vacuum state in a standby state. CONSTITUTION: First reference pressure is formed in a chamber by initial pumping inside the chamber(S300). Second reference pressures is formed in the chamber by pumping inside the chamber(S400). A substrate treating process is performed in the chamber while maintaining the second reference pressure(S500). The state of the chamber is changed into the atmosphere state after the substrate treating process(S600).
申请公布号 KR20120087460(A) 申请公布日期 2012.08.07
申请号 KR20110008655 申请日期 2011.01.28
申请人 LIGADP CO., LTD. 发明人 HWANG, JAE SEOK
分类号 G02F1/13;C23C14/24;H01J9/24;H01L21/02 主分类号 G02F1/13
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