| 摘要 |
Provided is an integrated circuit including: multiple memory cells; a redundant memory having a function of repairing a defective cell included in the multiple memory cells by placing a corresponding fuse among multiple fuses into a first state; a fuse data conversion circuit that generates first information of a first defective cell based on position information of the fuse placed into the first state corresponding to the first defective cell having been repaired; a repair data generation circuit that generates, upon detection of a second defective cell as a result of a test for the multiple memory cells, repair information for repairing the second defective cell according to the first information and second information of the second defective cell; and a fuse state change circuit that places a predetermined fuse among the multiple fuses into the first state according to the repair information generated by the repair data generation circuit. |
