发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode. |
申请公布号 |
US8237167(B2) |
申请公布日期 |
2012.08.07 |
申请号 |
US201213357958 |
申请日期 |
2012.01.25 |
申请人 |
YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L29/04;H01L31/036;H01L31/0376;H01L31/20 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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