发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the number of photolithography processes when a transistor is manufactured. CONSTITUTION: Circuits(308,309) include a transistor with an oxide semiconductor layer on a first substrate(301). A second substrate(303) is fixed to the first substrate by a sealant(304). The first substrate is a semiconductor substrate or a glass substrate. The second substrate is a glass substrate. A closed space is surrounded by the sealant, the first substrate, and the second substrate. The pressure of the closed space is reduced or the closed space is filled with dry air. |
申请公布号 |
KR20120087838(A) |
申请公布日期 |
2012.08.07 |
申请号 |
KR20120007727 |
申请日期 |
2012.01.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAYAKAWA MASAHIKO;MORIYA YUTA;GOTO JUNYA;ARAI YASUYUKI |
分类号 |
G02F1/136;G02F1/1339;G09F9/30 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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