| 摘要 |
A Schottky diode device is provided, including a p-type semiconductor structure. An n drift region is disposed over the p-type semiconductor structure, wherein the n drift region comprises first and second n-type doping regions having different n-type doping concentrations, and the second n-type doping region is formed with a dopant concentration greater than that in the first n-type doping region. A plurality of isolation structures is disposed in the second n-type doping region of the n drift region, defining an anode region and a cathode region. A third n-type doping region is disposed in the second n-type doping region exposed by the cathode region. An anode electrode is disposed over the first n-type doping region in the anode region. A cathode electrode is disposed over the third n-type doping region in the cathode region. |
