| 摘要 |
A semiconductor device includes a first structural body having a first surface and a second surface which faces away from the first surface, and formed with first electrode pads on the first surface, a stress buffer layer formed on the first electrode pads and the first surface of the first structural body, and having a plurality of holes which expose the first electrode pads, and a plurality of bumps formed to be electrically connected with the first electrode pads through the plurality of holes, wherein the plurality of bumps include first bumps which are filled in corresponding holes of the plurality of holes and second bumps which are formed on the first bumps and the stress buffer layer and are disposed over the first electrode pads and portions of the first surface outside the first electrode pads. |
