发明名称 |
MEMORY CIRCUIT |
摘要 |
<p>PURPOSE: A memory circuit is provided to maintain a data signal by using a transistor with a channel in an oxide semiconductor layer when power is not supplied. CONSTITUTION: A memory circuit(111) includes a nonvolatile memory unit and a volatile memory unit. The nonvolatile memory unit includes a first transistor and a second transistor and maintains a data signal from the volatile memory unit in a node connected to a gate of a second transistor and one of a source or drain of a first transistor when the volatile memory unit stops. A booster circuit(112) is installed between a gate of a first transistor and a wire to supply power potential and boosts a voltage applied to the gate of the first transistor.</p> |
申请公布号 |
KR20120087087(A) |
申请公布日期 |
2012.08.06 |
申请号 |
KR20120007541 |
申请日期 |
2012.01.26 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHMARU TAKURO |
分类号 |
G11C11/34;G11C5/14;H01L29/786 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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