发明名称 MEMORY CIRCUIT
摘要 <p>PURPOSE: A memory circuit is provided to maintain a data signal by using a transistor with a channel in an oxide semiconductor layer when power is not supplied. CONSTITUTION: A memory circuit(111) includes a nonvolatile memory unit and a volatile memory unit. The nonvolatile memory unit includes a first transistor and a second transistor and maintains a data signal from the volatile memory unit in a node connected to a gate of a second transistor and one of a source or drain of a first transistor when the volatile memory unit stops. A booster circuit(112) is installed between a gate of a first transistor and a wire to supply power potential and boosts a voltage applied to the gate of the first transistor.</p>
申请公布号 KR20120087087(A) 申请公布日期 2012.08.06
申请号 KR20120007541 申请日期 2012.01.26
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHMARU TAKURO
分类号 G11C11/34;G11C5/14;H01L29/786 主分类号 G11C11/34
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