METHOD AND APPARATUS FOR ETCHING SILICON OXIDE LAYER OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for etching a silicon oxide layer of a semiconductor substrate and an apparatus thereof are provided to efficiently eliminating an etching reactant fluid and reduce process time by reducing undesirable post reaction due to residual hydrofluoric acid. CONSTITUTION: A semiconductor substrate is arranged on a shelf of a reaction chamber(S10). A silicon oxide film of the semiconductor substrate is etched by injecting high density carbon dioxide and an etchant(S20). A fluid inside the reaction chamber is discharged to a lower portion of the reaction chamber by injecting supercritical helium into the top of the reaction chamber(S30). The supercritical helium is discharged to the top of the reaction chamber by injecting the high density carbon dioxide from the lower portion of the reaction chamber(S40). The semiconductor substrate is dried by reducing the internal pressure of the reaction chamber(S50).