发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: A semiconductor device including a metal contact plug and a formation method thereof are provided to improve semiconductor device characteristics by preventing the semiconductor substrate and the metal contact plug from being connected in the connection of the metal contact plug and a gate metal. CONSTITUTION: A semiconductor substrate(100) includes an active region(104) defined in a cell region(Cell) with an element isolation film(102). A barrier film(130) is formed on an upper portion of the element isolation film and the active region. A storage electrode contact plug(134) fills a gap between the barrier film and a bit line(120). A gate electrode(106) is filled in the element isolation film. A sealing insulating layer(108) is formed on the upper potion of the gate electrode. A metal contact plug(140) is connected to the gate electrode.
申请公布号 KR20120086624(A) 申请公布日期 2012.08.03
申请号 KR20110007984 申请日期 2011.01.26
申请人 SK HYNIX INC. 发明人 KIM, BA WOOL;KIM, HYUNG KYU
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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