| 摘要 |
<p>Provided is a method for manufacturing a TFT substrate (30a) provided with a plurality of TFTs (5a) and comprising: a semiconductor layer (15) that has a channel region (C); a gate electrode (13a) that is disposed on the semiconductor layer (15) with a gate insulating film (14) therebetween, and is arranged so as to overlap the channel region (C); and a source electrode (18a) and drain electrode (18b) that are arranged separated from each other, and are respectively connected to both outer sides of the channel region (C) of the semiconductor layer (15). The method for manufacturing a TFT substrate (30a) includes: a film forming step for forming a copper film on a substrate (10) at a temperature at which surface oxidation thereof is suppressed; and an etching step for forming, after a resist pattern has been formed on the formed copper film, at least one of the gate electrode (13a), source electrode (18a) and drain electrode (18b) by performing wet etching to remove the copper film that is exposed from the resist pattern.</p> |
