| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pretreatment method in the direct drawing process of an organic film pattern onto a semiconductor substrate capable of preventing the problems of drawing properties or adhesion which occur easily when forming a film pattern of resist or an organic film pattern for passivation by direct drawing. <P>SOLUTION: When an organic film pattern 5 is formed on the surface of a semiconductor substrate 1 covered with a plurality of pattern films 2, 3, 4, composed of materials different from each other, by direct drawing so that the organic film pattern is laminated on the plurality of pattern films 2, 3, 4, the surface of a semiconductor substrate 1 is pretreated, i.e. ashed using oxygen and nitrogen as a plasma generation gas, and then cleaned using hydrogen and nitrogen as a plasma generation gas. <P>COPYRIGHT: (C)2012,JPO&INPIT |
