SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving sufficient channel mobility and capable of reducing the manufacturing cost.

SOLUTION: An MOSFET 100 comprises: a silicon carbide substrate 1 having a primary surface 1A with an off-angle of 50° or more to 65° or less with respect to the ä0001} plane; an active layer 7 formed on the primary surface 1A; a gate oxide film 91 formed on the active layer 7; p-type body regions 4 that are formed in the active layer 7 so as to include regions contacting the gate oxide film 91 and have a p conductivity type; n+regions 5 that are formed in the p-type body regions 4 so as to include a primary surface of the active layer 7 opposite to the silicon carbide substrate 1 and have an n conductivity type; and source contact electrodes 92 formed on the active layer 7 so as to contact the n+regions 5. The p-type impurity density in the p-type body regions 4 is 5×1017cm-3or more. The source contact electrodes 92 directly contact the p-type body regions 4.

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