发明名称 UNDERFILL MATERIAL AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an underfill material which has low viscosity and good infiltration properties into a narrow pitch and a narrow gap and which provides a cured product having low hygroscopic nature and high adhesion to a silicon chip and a passivation film material, and a semiconductor device sealed with the cured product of the underfill material. <P>SOLUTION: The underfill material contains (A) (A-1) 50-99 pts.mass of a liquid epoxy resin and/or an epoxy compound having at least two epoxy groups per molecule and (A-2) 1-50 pts.mass of a monofunctional epoxy compound having a biphenyl structure, wherein the total of (A-1) and (A-2) is 100 pts.mass, (B) an amine-based curing agent, wherein the amount thereof is such that the molar quantity of the epoxy group in the component (A) relative to the molar quantity of the amino group in the component (B) is 0.7-1.2, (C) an inorganic filler, wherein the amount thereof is 50-300 pts.mass relative to the total 100 pts.mass of the component (A) and the component (B), and (D) silicone fine particles coated with a polyorganosilsesquioxane resin, wherein the amount thereof is 1-15 pts.mass relative to the total 100 pts.mass of the component (A) and the component (B). <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012144661(A) 申请公布日期 2012.08.02
申请号 JP20110005181 申请日期 2011.01.13
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 SUMIDA KAZUMASA;KIMURA YASUO
分类号 C08G59/18;H01L23/29;H01L23/31 主分类号 C08G59/18
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