| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming device capable of forming an amorphous silicon film capable of further improving precision of surface roughness and coping with progress of miniaturization of contact holes and lines or the like. <P>SOLUTION: A film forming device comprises: a processing chamber 101 which houses a workpiece 1 having a base; a processing gas supply mechanism 114; a heating device 133; an exhaust mechanism 132; and a controller 150. The controller 150 controls the processing gas supply mechanism 114, heating device 133, and exhaust mechanism 132 so that the film forming device can perform a step of forming a seed layer on a surface of the base by flowing aminosilane-based gas to the heated base and a step of forming an amorphous silicon film on the seed layer by supplying silane-based gas containing no amino group to the seed layer on a surface of the heated base and thermally decomposing the silane-based gas containing no amino group. A heating temperature in the step of forming the seed layer is lower than a heating temperature in the step of forming the amorphous silicon film. Processing time in the step of forming the seed layer is shorter than processing time in the step of forming the amorphous silicon film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
