METHOD FOR TREATING METAL FILM AND TREATMENT DEVICE

摘要

A method for treating a metal film that utilizes a gas cluster beam to treat a metal film (72) formed on a surface of an object to be treated (W). A gas cluster beam is formed by adiabatically expanding a mixed gas comprising an oxidation gas for forming an oxide by oxidizing the elements of the metal film, a complexing gas for forming an organic metal complex by reacting with the oxide, and a rare gas; and the gas cluster beam is used to bombard the metal film of the object to be treated in order to etch the metal film.