| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily prepare a mask pattern usable for forming a desired pattern on a substrate. <P>SOLUTION: A preparing method for a mask pattern provided by the invention comprises the steps of: extracting, as an undesired transfer pattern, an undesired pattern transferred onto a substrate due to an auxiliary pattern when a pattern on a substrate is formed on the substrate by using a mask pattern including the auxiliary pattern; and correcting the mask pattern by changing a size of the auxiliary pattern in accordance with a size and a position of the undesired transfer pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
