| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a detection method of poor wiring in a semiconductor element capable of detecting poor wiring in a semiconductor wafer for a product, and capable of detecting poor wiring in each semiconductor element for the product. <P>SOLUTION: In the detection method of poor wiring in a semiconductor element, the defect detection wiring 122 thinner than the ground wiring 112 is formed for each semiconductor element 100 on the further outer circumferential side than the ground wiring 112 formed on the outer circumference of an element formation region R1, when the multiple semiconductor elements 100 are manufactured in a semiconductor wafer 10. Furthermore, a measurement terminal 124 connected with the defect detection wiring 122 is formed in a scribe region R2 around the element formation region R1, and poor wiring is detected using the measurement terminal 124. <P>COPYRIGHT: (C)2012,JPO&INPIT |
