| 摘要 |
A MOSFET includes a silicon carbide substrate, an active layer, a gate oxide film, and a gate electrode. The active layer includes a p type body region in which an inversion layer is formed when the gate electrode is fed with a voltage. The inversion layer has an electron mobilityμdependent more strongly on an acceptor concentration Na of a channel region of the p type body region, as compared with a dependency of the electron mobilityμbeing proportional to the reciprocal of the acceptor concentration Na. The acceptor concentration Na in the channel region of the p type body region is not less than 1×1016 cm−3 and not more than 2×1018 cm3. The channel length (L) is equal to or smaller than 0.43μm. The channel length (L) is equal to or longer than a spreading width d of a depletion layer in the channel region. The spreading width d is expressed by d=D·Na−C.
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