| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device with a fuse. <P>SOLUTION: A semiconductor device is composed of an electric-fusion relief fuse 4a and a testing fuse 4b provided on a layer M4 among layers M1-M6 forming a multilayer wiring formed on a main surface of a semiconductor substrate 11, a pair of conductor plates 10a provided on the layers M2 and M6 near the fuse 4a, and a pair of conductor plates 10b provided on the layers M3 and M5 near the fuse 4b. The distance between the fuse 4b and the conductor plate 10b is shorter than the distance between the fuse 4a and the conductor plate 10a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012147009(A) |
申请公布日期 |
2012.08.02 |
| 申请号 |
JP20120072740 |
申请日期 |
2012.03.28 |
| 申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
UCHIDA TAKAHIRO;OBAYASHI SHIGEKI;YONEZU TOSHIAKI;IWAMOTO TAKESHI;KONO KAZUFUMI;ARAKAWA MASASHI |
| 分类号 |
H01L21/82;H01L21/3205;H01L21/768;H01L21/822;H01L23/522;H01L23/532;H01L27/04 |
主分类号 |
H01L21/82 |
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