NANOSTRUCTURED SEMICONDUCTOR MATERIALS, METHOD FOR THE MANUFACTURE THEREOF AND CURRENT PULSE GENERATOR FOR CARRYING OUT SAID METHOD

摘要

The present invention relates to a method for electrochemical treatments of a semiconductor material and the electrical pulse generator for said method used in the production of three-dimensional structures integrated in a wafer of semiconductor material or free standing nanostructured particles, characterized in that it comprises at least one step for the anodic formation of one or multiple porous layers etched in a semiconductor by means of applying electric current pulses with modulation of its intensity in time, a step of lifting the layers from the substrate by ultrasounds or mechanically and, optionally, a step of mechanical grinding.