发明名称 |
Semiconductor device, method of manufacturing semiconductor device, and electronic device |
摘要 |
A semiconductor device includes a semiconductor element (2) and an electronic element (3). The semiconductor element has a first protruding electrode (2a), and the electronic element has a second protruding electrode (3a). A substrate (4) is disposed between the semiconductor element (2) and the electronic element (3). The substrate has a through-hole (4a) in which the first and second protruding electrodes (2a, 3a) are fitted. The first and second protruding electrodes are connected together inside the through-hole (4a) of the substrate. |
申请公布号 |
EP2482311(A2) |
申请公布日期 |
2012.08.01 |
申请号 |
EP20120150102 |
申请日期 |
2012.01.03 |
申请人 |
FUJITSU LIMITED |
发明人 |
AKAMATSU, TOSHIYA |
分类号 |
H01L23/498;H01L21/60;H01L21/98;H01L23/14;H01L23/48;H01L25/065 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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