发明名称 Semiconductor device, method of manufacturing semiconductor device, and electronic device
摘要 A semiconductor device includes a semiconductor element (2) and an electronic element (3). The semiconductor element has a first protruding electrode (2a), and the electronic element has a second protruding electrode (3a). A substrate (4) is disposed between the semiconductor element (2) and the electronic element (3). The substrate has a through-hole (4a) in which the first and second protruding electrodes (2a, 3a) are fitted. The first and second protruding electrodes are connected together inside the through-hole (4a) of the substrate.
申请公布号 EP2482311(A2) 申请公布日期 2012.08.01
申请号 EP20120150102 申请日期 2012.01.03
申请人 FUJITSU LIMITED 发明人 AKAMATSU, TOSHIYA
分类号 H01L23/498;H01L21/60;H01L21/98;H01L23/14;H01L23/48;H01L25/065 主分类号 H01L23/498
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