发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A gate electrode, an element isolation film and a drain region in an LDMOS transistor formation region and a gate electrode, an element isolation film and an anode region in an ESD protection element formation region are formed to satisfy relationships of A1 = A2 and B1 < B2 where the LDMOS transistor formation region has an overlap length A1 of the gate electrode and the element isolation film and a distance B1 between the gate electrode and the drain region, and the ESD protection element formation region has an overlap length A2 of the gate electrode and the element isolation film and a distance B2 between the gate electrode and the anode region. |
申请公布号 |
EP2482313(A1) |
申请公布日期 |
2012.08.01 |
申请号 |
EP20110189873 |
申请日期 |
2011.11.21 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
ASANO, MASAYOSHI;MITANI, JUNICHI |
分类号 |
H01L27/02;H01L29/08;H01L29/10;H01L29/78 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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