| 摘要 |
<p>The present invention relates to a deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film 88 having a larger film thickness on the surface of a substrate 81 excluding the side walls and the bottom surface of a hole 87 than on the bottom surface of the hole 87 so that the film thickness ratio of the film thickness of the oxide film 88 formed on the surface of the substrate 81 excluding the side walls and the bottom surface of the hole 87 to the film thickness of the oxide film 88 formed on the bottom surface of the hole 87 becomes a predetermined ratio, plasma is generated from gas mixture including tetraethoxysilane and oxygen to form an oxide film 88a and then plasma is generated from gas mixture including silane and nitrous oxide, with which a film thickness ratio larger than that obtained when using gas mixture including tetraethoxysilane and oxygen can be obtained, to form an oxide film 88b, thereby forming the oxide film 88 with a predetermined film thickness ratio with the oxide film 88a formed by the tetraethoxysilane and the oxygen and the oxide film 88b formed by the silane and the nitrous oxide.</p> |
