发明名称 Exposure method and method of manufacturing semiconductor device
摘要 The exposure method includes the steps of: illuminating a hologram recording medium, in which a hologram with a first pattern has been recorded by illumination with a laser beam emitted from a first laser oscillator, with a laser beam emitted from a second laser oscillator; and delivering the laser beam emitted from the second laser oscillator, which has passed through the hologram recording medium, onto a resist, thereby forming a second pattern in the resist. The wavelength of the laser beam used for illuminating the resist through the hologram recording medium in which the hologram is recorded is shorter than the wavelength of the laser beam used for recording the hologram in the hologram recording medium. Further, the wavelength of the laser beam used for illuminating the resist is 1/(0.5×n) (where n is an integer not less than 3) that of the laser beam used for recording the hologram.
申请公布号 US8233203(B2) 申请公布日期 2012.07.31
申请号 US20070705049 申请日期 2007.02.12
申请人 OHNUMA HIDETO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHNUMA HIDETO
分类号 G03H1/20;G02B5/32;G02B27/54;G03H1/22 主分类号 G03H1/20
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