发明名称 |
Semiconductor light emitting device having conductive substrate |
摘要 |
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer. |
申请公布号 |
US8232570(B2) |
申请公布日期 |
2012.07.31 |
申请号 |
US20080144435 |
申请日期 |
2008.06.23 |
申请人 |
KIM KYUNG JUN;LG INNOTEK CO., LTD. |
发明人 |
KIM KYUNG JUN |
分类号 |
H01L33/00;H01L27/15;H01L29/06;H01L29/26;H01L31/00;H01L31/12;H01L33/02;H01L33/12 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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