SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve internal quantum efficiency by maximizing the coupling efficiency of surface plasmon. CONSTITUTION: A light emitting structure(20) is formed on a substrate(10). The light emitting structure comprises a first conductivity type semiconductor layer(21), an active layer(22), and a second conductivity type semiconductor layer(23). A plasmon generating layer(30) is formed inside at least one of the first and second conductivity type semiconductor layer. A first conductivity type electrode(21a) is formed on the first conductivity type semiconductor layer. A second conductive type electrode(23a) is formed on the second conductivity type semiconductor layer.