发明名称 Magnetic domain data storage devices and methods of manufacturing the same
摘要 Example embodiments may provide data storage devices using movement of magnetic domain walls including a first magnetic layer having at least two magnetic domains with determinable magnetization directions, and/or a soft second magnetic layer formed on a lower surface of the first magnetic layer. Magnetic domain walls may be moved even in curved regions of the first magnetic layer.
申请公布号 US8231987(B2) 申请公布日期 2012.07.31
申请号 US20070000243 申请日期 2007.12.11
申请人 LIM CHEE-KHENG;SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM CHEE-KHENG
分类号 G11B5/66 主分类号 G11B5/66
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