GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

Provided is a group III nitride semiconductor laser element with a structure that can improve oscillation yield. An end face (17c) of a support base (17) and an end face (19c) of a semiconductor region (19) each appear in first and second divided cross-sections (27, 29). A laser structure 13 includes first and second faces (13a, 13b), and the first face (13a) is the face on the side opposite to the second face (13b). The first and second divided cross-sections (27, 29) each extend from the edge of the first face (13a) to the edge of the second face (13b). The semiconductor region (19) includes an InGaN layer (24). The semiconductor region (19) can include an InGaN layer (24). The divided cross-section (29) includes a difference in level (26) provided on an end face (24a) of the InGaN layer (24). The difference in level (26) extends in a direction from one side face (22a) of this group III nitride semiconductor laser element (11) to the other side face (22b). The difference in level (26) can be formed on the end face (24a) of the InGaN layer (24) partially or as a whole in the divided cross-sections (27, 29).