发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
A method for forming a semiconductor device comprises: forming at least one gate stack structure and an interlayer material layer between the gate stack structures on a semiconductor substrate; defining isolation regions and removing a portion of the interlayer material layer and a portion of the semiconductor substrate which has a certain height in the regions, so as to form trenches; removing portions of the semiconductor substrate which carry the gate stack structures, in the regions; and filling the trenches with an insulating material. A semiconductor device is also provided. The area of the isolation regions may be reduced.
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申请公布号 |
US2012187496(A1) |
申请公布日期 |
2012.07.26 |
申请号 |
US201113266555 |
申请日期 |
2011.04.19 |
申请人 |
ZHONG HUICAI;LIANG QINGQING;YIN HAIZHOU;ZHU HUILONG |
发明人 |
ZHONG HUICAI;LIANG QINGQING;YIN HAIZHOU;ZHU HUILONG |
分类号 |
H01L27/088;H01L21/302 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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