| 摘要 |
PURPOSE: A semiconductor light emitting device and manufacturing method for the same are provided to increase light extraction efficiency generated from an active layer by forming a concavo-convex structure of a polygon column type periodically arranged in an insulating layer. CONSTITUTION: An integrated light emitting body(150) including an n-type nitride semiconductor layer(120), active layer(130), and p-type nitride semiconductor layer(140) is formed on a substrate(110). A transparent conductible layer(160) is formed on the integrated light emitting body where an insulating layer(170) is formed. A concavo-convex structure(172) periodically arranged in the insulating layer is formed.
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