| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist, in which defects such as blob defects are reduced. <P>SOLUTION: A novel photoresist composition is provided containing at least one kind of material having a base reactive group and particularly useful for dry lithography. A preferable photoresist can reduce defects in a resist coating layer after development. The base reactive group is typically reactive under typical photoresist developing conditions, for example, in a single puddle development process with a 0.26 N tetrabutylammonium hydroxide developer composition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
