| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent thermal damage of a semiconductor element. <P>SOLUTION: In a semiconductor device 100 on which a plurality of semiconductor elements 13a and 13b are mounted, a metal plate 20 is bonded onto the top surfaces of the semiconductor elements 13a and 13b. Besides, a conductor plate 15 serving as a current path of the semiconductor device 100 is bonded onto the metal plate 20 by laser welding. The conductor plate 15 is bonded onto a portion of the metal plate 20 except in the portions located directly above the semiconductor elements 13a and 13b by the laser welding. This structure allows the achievement of a semiconductor device capable of reducing the thermal damage by the laser welding. <P>COPYRIGHT: (C)2012,JPO&INPIT |
