| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can manufacture in a simpler process a semiconductor device capable of inhibiting unevenness and cracks after grinding caused by presence of existence and non-existence of a cavity and contributing to downsizing of devices and electronic equipment on which the devices are mounted. <P>SOLUTION: A semiconductor device manufacturing method comprises in order: a bonding step of bonding a first substrate having light permeability with a second substrate provided with a functional element on one face such that the functional element faces the first substrate; a thinning process of thinning at least one of the first substrate and the second substrate; and a through hole forming step of forming a cavity and a through hole communicating with the cavity on at least a part of a bonded part of the first substrate and the second substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
