| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage element having excellent dielectric strength voltage. <P>SOLUTION: A storage element includes a lower electrode, a storage layer and an upper electrode in this order. The storage layer includes a resistance change layer and an ion source layer. The ion source layer includes a chemical element which becomes a movable ion, and when voltage is applied to the upper electrode and the lower electrode, a resistance value of the storage layer changes thereby to store information. The resistance change layer includes fluoride such as magnesium fluoride. Alternatively, the lower electrode includes fluorine or phosphorus. Accordingly, the resistance change layer is insusceptible to voltage application thereby inhibiting degradation of memory property caused by deterioration of the resistance change layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
