| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a long-life surface emitting semiconductor laser which can achieve a high output and polarization control of fundamental lateral mode light. <P>SOLUTION: A surface emitting semiconductor laser 10 comprises a substrate 100, an n-type lower DBR 102, an active region 104, a p-type upper DBR 106, a mesa M formed on the substrate, a current constriction layer 108 formed in the mesa M and having a conductive region 108B surrounded by a selectively oxidized oxide region 108A, an annular p-side electrode 110 formed at the top of the mesa M and defines a light emission window 110A, a first dielectric film 112 having a first refraction index and covering the light emission window 110A, and an elliptical second dielectric film 118 having a second refraction index larger than the first refraction index and formed on the first dielectric film 112. <P>COPYRIGHT: (C)2012,JPO&INPIT |
