| 发明名称 |
NANOWIRE MOSFET WITH DOPED EPITAXIAL CONTACTS FOR SOURCE AND DRAIN |
| 摘要 |
A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy. |
| 申请公布号 |
US2012190155(A1) |
申请公布日期 |
2012.07.26 |
| 申请号 |
US201213440590 |
申请日期 |
2012.04.05 |
| 申请人 |
CHU JACK O.;COHEN GUY M.;OTT JOHN A.;ROOKS MICHAEL J.;SOLOMON PAUL M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU JACK O.;COHEN GUY M.;OTT JOHN A.;ROOKS MICHAEL J.;SOLOMON PAUL M. |
| 分类号 |
H01L21/336;B82Y40/00 |
主分类号 |
H01L21/336 |
| 代理机构 |
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