发明名称 |
Perovskite type oxide, ferroelectric film, process for producing same, ferroelectric device, and liquid discharge apparatus |
摘要 |
<p>In a perovskite type oxide, which is of a PZT type, doping of donor ions in a doping concentration of at least 5 mol% at an A site is enabled without a sintering auxiliary or acceptor ions being doped. The perovskite type oxide is represented by Formula (P) :
Pb<Sub>1-x+δ</Sub>M<Sub>x</Sub>) (Zr<Sub>y</Sub>Ti<Sub>1-y</Sub>)O<Sub>z</Sub> (P)
wherein M represents at least one kind of element selected from the group consisting of Bi and lanthanide elements, 0.05 ≤ x ≤ 0.4, and 0 < y ≤ 0.7, the standard composition being such that δ=0, and z=3, with the proviso that the value of δ and the value of z may deviate from the standard values of 0 and 3, respectively, within a range such that the perovskite structure is capable of being attained.</p> |
申请公布号 |
EP2034040(A3) |
申请公布日期 |
2012.07.25 |
申请号 |
EP20080015289 |
申请日期 |
2008.08.29 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
ARAKAWA, TAKAMI;FUJII, TAKAMICHI |
分类号 |
C23C14/08;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;C01G23/00;C04B35/491;C04B35/493;C23C14/34;H01L21/02;H01L21/316;H01L41/08;H01L41/09;H01L41/18;H01L41/187;H01L41/316;H01L41/39 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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