发明名称 Perovskite type oxide, ferroelectric film, process for producing same, ferroelectric device, and liquid discharge apparatus
摘要 <p>In a perovskite type oxide, which is of a PZT type, doping of donor ions in a doping concentration of at least 5 mol% at an A site is enabled without a sintering auxiliary or acceptor ions being doped. The perovskite type oxide is represented by Formula (P) :          Pb&lt;Sub&gt;1-x+δ&lt;/Sub&gt;M&lt;Sub&gt;x&lt;/Sub&gt;) (Zr&lt;Sub&gt;y&lt;/Sub&gt;Ti&lt;Sub&gt;1-y&lt;/Sub&gt;)O&lt;Sub&gt;z&lt;/Sub&gt;     (P) wherein M represents at least one kind of element selected from the group consisting of Bi and lanthanide elements, 0.05 ≤ x ≤ 0.4, and 0 &lt; y ≤ 0.7, the standard composition being such that δ=0, and z=3, with the proviso that the value of δ and the value of z may deviate from the standard values of 0 and 3, respectively, within a range such that the perovskite structure is capable of being attained.</p>
申请公布号 EP2034040(A3) 申请公布日期 2012.07.25
申请号 EP20080015289 申请日期 2008.08.29
申请人 FUJIFILM CORPORATION 发明人 ARAKAWA, TAKAMI;FUJII, TAKAMICHI
分类号 C23C14/08;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;C01G23/00;C04B35/491;C04B35/493;C23C14/34;H01L21/02;H01L21/316;H01L41/08;H01L41/09;H01L41/18;H01L41/187;H01L41/316;H01L41/39 主分类号 C23C14/08
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