| 摘要 |
PURPOSE: A junction field effect transistor and method thereof are provided to highly secure a margin of a channel layer of junction field effect transistor by forming a p-type diffusion layer with a ripple type by using two more p-type diffusion layers which separate from each other. CONSTITUTION: A p-type substrate(400) is formed on the top of an n-type channel layer(408). A p-type diffusion layer(414) is formed on the top of the n-type channel layer. An additional p-type diffusion layer(420) is formed on the inside of the top of the p-type channel layer as a ripple type. A gate electrode(422) is formed on the top of the p-type channel layer. A source(424) and drain(426) electrodes are formed on the both sides of the p-type diffusion layer.
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