| 摘要 |
A semiconductor device 100 has such a structure that a semiconductor chip 110 is flip-chip mounted on a wiring board 120. The wiring board 120 has a multilayer structure in which a plurality of wiring layers and a plurality of insulating layers are arranged, and a first electrode pad 130 is formed on a chip mounting side. A taper surface 132 of the first electrode pad 130 has a gradient in an orientation reduced in an upward direction toward a solder connecting side or a chip mounting side. Therefore, a holding force for a force applied to the solder connecting side or the chip mounting side is increased, and furthermore, the taper surface 132 adheres to a tapered internal wall of an insulating layer of a first layer so that a bonding strength to the insulating layer is increased.
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