发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to improve yield of the semiconductor device by controlling the generation of a void within a mold. CONSTITUTION: A cavity(14a) corresponding to the form either a top mold(14) or a bottom mold(15) is formed. An injection gate(14d) connected with the cavity and a resin forming mold(13) equipped with an air bent are prepared. A plate shaped member equipped with a semiconductor chip is arranged between the top mold and the bottom mold. The top mold and the bottom mold are clamped in the state covering the semiconductor chip with the cavity. A sealing body is formed on the plate shaped member e by injecting a resin for sealing into the cavity from the injection gate.
申请公布号 KR20120081951(A) 申请公布日期 2012.07.20
申请号 KR20120003495 申请日期 2012.01.11
申请人 RENESAS ELECTRONICS CORPORATION 发明人 OKADA MAKIO;KURAYA HIDETOSHI;TANABE TOSHIO;FUJISAKI YOSHINORI;ARITA KOTARO
分类号 H01L21/56;H01L23/28 主分类号 H01L21/56
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