RADIATION HARDENED TRANSISTORS BASED ON GRAPHENE AND CARBON NANOTUBES
摘要
<p>Graphene- and/or carbon nanotube-based radiation-hard transistor devices and techniques for the fabrication thereof are provided. In one aspect, a method of fabricating a radiation-hard transistor is provided. The method includes the following steps. A radiation-hard substrate is provided. A carbon-based material is formed on the substrate wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor. Contacts are formed to the portions of the carbon-based material that serve as the source and drain regions of the transistor. A gate dielectric is deposited over the portion of the carbon-based material that serves as the channel region of the transistor. A top-gate contact is formed on the gate dielectric.</p>
申请公布号
WO2012096914(A1)
申请公布日期
2012.07.19
申请号
WO2012US20713
申请日期
2012.01.10
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;LIN, YU-MING;YAU, JENG-BANG