发明名称 SPUTTERING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To control the composition of a deposited film in the reactive sputtering caused by the simultaneous discharge of a plurality of targets. <P>SOLUTION: By making different the amounts of reactive gas respectively supplied to targets, a reactive product with reactive gas is sputtered from one target, and a target material is sputtered from the other target. Thus, the composition of the deposited film can be controlled. Further, by executing the sputtering with one target in a poison mode and the other target in a metal mode, a compound consisting of the reactive product and the metal is film-deposited. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012136756(A) 申请公布日期 2012.07.19
申请号 JP20100291234 申请日期 2010.12.27
申请人 CANON ANELVA CORP 发明人 MINAMI TAKUJI
分类号 C23C14/34;C23C14/06;H01L21/28;H01L21/285 主分类号 C23C14/34
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