发明名称 |
HV Interconnection Solution Using Floating Conductors |
摘要 |
A device includes a first and a second heavily doped region in a semiconductor substrate. An insulation region has at least a portion in the semiconductor substrate, wherein the insulation region is adjacent to the first and the second heavily doped regions. A gate dielectric is formed over the semiconductor substrate and having a portion over a portion of the insulation region. A gate is formed over the gate dielectric. A floating conductor is over and vertically overlapping the insulation region. A metal line includes a portion over and vertically overlapping the floating conductor, wherein the metal line is coupled to, and carries a voltage of, the second heavily doped region. |
申请公布号 |
US2012181629(A1) |
申请公布日期 |
2012.07.19 |
申请号 |
US201113007220 |
申请日期 |
2011.01.14 |
申请人 |
SU RU-YI;YANG FU-CHIH;TSAI CHUN-LIN;HUO KER HSIAO;CHENG CHIH-CHANG;LIU RUEY-HSIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
SU RU-YI;YANG FU-CHIH;TSAI CHUN-LIN;HUO KER HSIAO;CHENG CHIH-CHANG;LIU RUEY-HSIN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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